Evolution of surface morphology during the growth of amorphous and polycrystalline silicon films |
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Authors: | A V Novak V R Novak D I Smirnov |
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Institution: | 1.National Research University of Electronic Technology (MIET),Zelenograd,Russia;2.“Angstrem”Public Corporation,Zelenograd,Russia;3.Lukin Research Institute of Physical Problems,Zelenograd,Russia;4.Lebedev Physical Institute,Russian Academy of Sciences,Moscow,Russia |
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Abstract: | The evolution of the surface morphology of LPCVD poly-Si films (deposition temperature 620°C), a-Si films (deposition temperature 550°C) and poly-Si films, obtained by the crystallization of a-Si is investigated in the thickness range 40–500 nm. It is found that upon an increase in the thickness from 40 to 500 nm, the surface roughness (parameters S q , S z , S v ) is increased for poly-Si, while in the case of a-Si and poly-Si obtained by crystallization a-Si, on the contrary, decreases. The correlation length (S al ) increases for all three types of silicon films. Poly-Si films, obtained by the crystallization of a-Si, as compared to LPCVD poly-Si films have a significantly lower surface roughness, respectively, S q two times less at a thickness of 40 nm and sixteen times less at 500 nm. In contrast to thick films, thin a-Si films (at thicknesses of less than 40 nm) have a granular structure, which is especially pronounced at an average thickness of about 20 nm and there is a maximum on the dependence of the roughness S q on the thickness. |
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