Radiation resistance of 4<Emphasis Type="Italic">H</Emphasis>-SiC Schottky diodes under irradiation with 0.9-MeV electrons |
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| Authors: | A A Lebedev K S Davydovskaya A M Strelchuk V V Kozlovski |
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| Institution: | 1.Ioffe Physical–Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.St. Petersburg State Polytechnic University,St. Petersburg,Russia |
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| Abstract: | Degradation of the parameters of 4H-SiC Schottky diodes after irradiation with 0.9-MeV electrons is studied. A charge-carrier removal rate of 0.07–0.09 cm–1 is determined. The Schottky diodes under investigation are shown to retain rectifying current-voltage characteristics up to doses of ~1017 cm–2. The radiation resistance of SiC Schottky diodes is found to be much greater than that of Si p–i–n-diodes with the same breakdown voltage. |
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