Pulsed magnetron sputtering and ion-induced annealing of carbon films |
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Authors: | E. F. Shevchenko I. A. Sysoev S. Prucnal K. Frenzel |
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Affiliation: | 1.North-Caucasus Federal University,Stavropol,Russia;2.Helmholz-Zentrum Dresden–Rossendor,Dresden,Germany |
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Abstract: | Thin carbon films are deposited on a silicon substrate at room temperatures via the biased pulsed magnetron sputtering of graphite in the physical (Ar, Kr, Xe) and reactive (Ar: CH4) modes at a different sputtering power density varying from 40 to 550 W/cm2. To ensure ion-assistance, negative bias of the substrate is set during film deposition by means of both DC and pulsed power sources. Some deposition parameters lead to a high hardness of the films (12.5 GPa), optical transparency, a surface resistance of RS > 109 Ω/h, and developed nanomorphology of the sample surface which bears visible inclusions with a lateral size of 35 nm. Some of the films are annealed after deposition with a C+-ion beam with an energy of 20 keV. A correlation between the parameters of magnetron deposition and ion-beam modification and the examined characteristics of the films is found. Different R S values in a wide range can be achieved by means of simple adjustment of the parameters and modes during magnetron sputtering and ion-beam modification. |
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