| ZnO光电导紫外探测器的制备和特性研究 |
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| 引用本文： | 叶志镇,张银珠,陈汉鸿,何乐年,邹璐,黄靖云,吕建国.ZnO光电导紫外探测器的制备和特性研究[J].电子学报,2003,31(11):1605-1607. |
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| 作者姓名： | 叶志镇 张银珠 陈汉鸿 何乐年 邹璐 黄靖云 吕建国 |
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| 作者单位： | 1. 浙江大学硅材料国家重点实验室,浙江杭州 310027;2. 浙江大学电机系,浙江杭州 310027 |
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| 基金项目： | 国家重点基础研究专项经费“973”(No .G2 0 0 0 0 683 0 6) |
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| 摘 要： | 以Si(111)衬底,用脉冲激光沉积(PLD)法制得C轴高度择优取向的ZnO薄膜,并利用剥离技术制备了ZnO光导型紫外探测器.Al叉指状电极是由平面磁控溅射技术沉积得到的.对Al/ZnO/Al的伏安特性和紫外光响应的研究表明,金属铝和ZnO能形成很好的欧姆接触,紫外探测器的电阻值在100KΩ左右.在紫外区域,其5V偏压下的光响应度为0.5A/W.
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| 关 键 词： | ZnO薄膜 光电导紫外探测器 欧姆接触 光响应度 |
| 文章编号： | 0372-2112(2003)11-1605-03 |
| 收稿时间： | 2002-11-26 |
Fabrication and Properties of ZnO Photoconductive UV Detector |
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| YE Zhi-zhen ,ZHANG Yin-zhu ,CHEN Han-hong ,HE Le-nian ,ZOU Lu ,HUANG Jing-yun ,LU Jian-guo.Fabrication and Properties of ZnO Photoconductive UV Detector[J].Acta Electronica Sinica,2003,31(11):1605-1607. |
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| Authors: | YE Zhi-zhen ZHANG Yin-zhu CHEN Han-hong HE Le-nian ZOU Lu HUANG Jing-yun LU Jian-guo |
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| Institution: | 1. Zhejiang University State Key Lab of Silicon Material,Hangzhou,Zhejiang 310027,China;2. Dept. of electrical engineering,Hangzhou,Zhejiang 310027,China |
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| Abstract: | Highly c-axis oriented ZnO thin films were deposited on single crystal Si(111)substrates by pulsed laser deposition(PLD).The photoconductive UV detectors based on ZnO thin films,being an MSM structure with interdigital(IDT)configuration,were fabricated by the desquamation photoetching method.The Al film-electrodes were deposited by planar magnetron sputtering.Results showed that the alloying temperature should be lower than 600℃.The I-V characteristic and the UV photoresponsivity of the detector were also investigated,indicating a good ohmic behavior between Al and ZnO thin film,a resistance about 100KΩ for the detector,and a photoresponsivity of 0.5A/W under ultraviolet illumination in ultraviolet region. |
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| Keywords: | ZnO thin films photoconductive UV detector ohmic contact photoresponsivity |
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