GaN-based lasers on SiC: influence of mirror reflectivity on L–I characteristics |
| |
Authors: | V. Schwegler, S. S. Schad, M. Scherer, M. Kamp, G. Ulu, M. Emsley, M. S. Ü nlü , A. Lell, S. Bader, B. Hahn, H. J. Lugauer, F. Kü hn, A. Weimar,V. H rle |
| |
Affiliation: | a Department of Optoelectronics, University of Ulm, Albert Einstein Allee 45, D-89069 Ulm, Germany b Photonics Center, Boston University, Boston, MA 02215, USA c OSRAM OS, D-93049 Regensburg, Germany |
| |
Abstract: | The influence of the mirror reflectivity on the L–I characteristics of GaN-based lasers has been studied. A cleaved, Al-coated fiber is used as an external micro-mirror to control the reflectance of the end facets allowing for a continuous adjustment of mirror losses of a particular laser. In contrast to other methods, this eliminates all ambiguities usually arising from the comparison of different or differently coated devices. An increase in the single facet external quantum efficiency by 45% is observed for uncoated lasers and simultaneously, the threshold current is reduced by 12%. Internal losses of approximately 20–30 cm−1 are derived from the differential quantum efficiency variation depending on the particular device under investigation. |
| |
Keywords: | A1. Atomic force microscopy B3. SCH-laser diodes |
本文献已被 ScienceDirect 等数据库收录! |
|