GaN-based lasers on SiC: influence of mirror reflectivity on L–I characteristics

The influence of the mirror reflectivity on the L–I characteristics of GaN-based lasers has been studied. A cleaved, Al-coated fiber is used as an external micro-mirror to control the reflectance of the end facets allowing for a continuous adjustment of mirror losses of a particular laser. In contrast to other methods, this eliminates all ambiguities usually arising from the comparison of different or differently coated devices. An increase in the single facet external quantum efficiency by 45% is observed for uncoated lasers and simultaneously, the threshold current is reduced by 12%. Internal losses of approximately 20–30 cm⁻¹ are derived from the differential quantum efficiency variation depending on the particular device under investigation.