| 单根In掺杂ZnO纳米带场效应管的电学性质 |
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| 引用本文： | 唐欣月,高红,潘思明,孙鉴波,姚秀伟,张喜田.单根In掺杂ZnO纳米带场效应管的电学性质[J].物理学报,2014,63(19):197302-197302. |
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| 作者姓名： | 唐欣月 高红 潘思明 孙鉴波 姚秀伟 张喜田 |
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| 作者单位： | 光电带隙材料省部共建教育部重点实验室, 哈尔滨师范大学物理与电子工程学院, 哈尔滨 150025 |
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| 基金项目： | 国家自然科学基金(批准号:11074060,51172058);黑龙江省教育厅科学技术重点研究项目(批准号:12521z012);黑龙江省研究生创新科研项目(2013)资助的课题~~ |
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| 摘 要： | 采用化学气相沉积法合成了In掺杂ZnO纳米带,并对其进行了X射线衍射、光致发光及透射电镜表征.基于单根纳米带,采用廉价微栅模板法制备了背栅场效应管,利用半导体参数测试仪测量了场效应管的输出(Ids-Vds)和转移(Ids-Vgs)特性,得出相关电学参数,其中迁移率值为622 cm2·V-1·s-1,该值明显优于包括ZnO在内的大多数材料;讨论了迁移率提高的可能原因.
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| 关 键 词： | ZnO 纳米带 场效应管 迁移率 |
| 收稿时间： | 2014-03-27 |
Electrical characteristics of individual In-dop ed ZnO nanob elt field effect transistor |
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| Tang Xin-Yue
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Gao Hong
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Pan Si-Ming
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Sun Jian-Bo
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Yao Xiu-Wei
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Zhang Xi-Tian.Electrical characteristics of individual In-dop ed ZnO nanob elt field effect transistor[J].Acta Physica Sinica,2014,63(19):197302-197302. |
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| Authors: | Tang Xin-Yue Gao Hong Pan Si-Ming Sun Jian-Bo Yao Xiu-Wei Zhang Xi-Tian |
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| Institution: | Tang Xin-Yue;Gao Hong;Pan Si-Ming;Sun Jian-Bo;Yao Xiu-Wei;Zhang Xi-Tian;Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University; |
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| Abstract: | Back-gate field effect transistors based on In-doped ZnO individual nanobelts have been fabricated using the low-cost microgrid template method. The output (Ids-Vds) and transfer (Ids-Vgs) characteristic curves for the transistors are measured, and the mobility is derived to be 622 cm2· V-1· s-1. This value is obviously superior to those for most of materials including pure ZnO in the literature, and possible influence factors have also been discussed.
Keywords：
ZnO
nanobelt
field effect transistor
mobility |
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| Keywords: | ZnO nanobelt field effect transistor mobility |
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