| 忆阻器及其阻变机理研究进展 |
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| 引用本文： | 刘东青,程海峰,朱玄,王楠楠,张朝阳.忆阻器及其阻变机理研究进展[J].物理学报,2014,63(18):187301-187301. |
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| 作者姓名： | 刘东青 程海峰 朱玄 王楠楠 张朝阳 |
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| 作者单位： | 1. 国防科技大学, 新型陶瓷纤维及其复合材料重点实验室, 长沙 410073;2. 国防科技大学, 高性能计算国家重点实验室, 长沙 410073 |
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| 基金项目： | 国家自然科学基金(批准号:21203248);湖南省高校科技创新团队支持计划资助的课题~~ |
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| 摘 要： | 忆阻器是除电阻、电容、电感之外的第四种电路元件,在信息存储、逻辑运算和神经网络等研究领域具有重要的应用前景.本文综述了忆阻器以及忆阻器材料的研究进展,主要介绍了忆阻器的内涵与特征、阻变机理、材料类型以及应用前景,指出了目前忆阻器研究中需要关注的主要问题,并对以后的发展趋势进行了展望.
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| 关 键 词： | 忆阻器 阻变机理 电阻开关 忆阻器材料 |
| 收稿时间： | 2014-04-24 |
Research progress of memristors and memristive mechanism |
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| Liu Dong-Qing;Cheng Hai-Feng;Zhu Xuan;Wang Nan-Nan;Zhang Chao-Yang.Research progress of memristors and memristive mechanism[J].Acta Physica Sinica,2014,63(18):187301-187301. |
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| Authors: | Liu Dong-Qing;Cheng Hai-Feng;Zhu Xuan;Wang Nan-Nan;Zhang Chao-Yang |
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| Institution: | Liu Dong-Qing;Cheng Hai-Feng;Zhu Xuan;Wang Nan-Nan;Zhang Chao-Yang;Science and Technology on Advanced Ceramic Fibers and Composites Laboratory,National University of Defense Technology;State Key Laboratory of High Performance Computing,National University of Defense Technology; |
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| Abstract: | Memristors are the fourth basic circuit element in addition to the three classical elements: resistor, capacitor, and inductor, which have great application prospects in the fields of information storage, logic operations and neuromorphic networks. The recent development of memristors and memristive mechanism is reviewed, including connotations and characteristics of memristors, memristive mechanism, types of memristive mateirals, and application prospects of memristors. Finally, the key problems and development proposals are presented and a prospect on the development trend is also given.
Keywords：
memristors
memristive mechanism
resistive switching
memristive materials |
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| Keywords: | memristors memristive mechanism resistive switching memristive materials |
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