Band structure of transverse-energy eigenvalues and strong electron scattering by atomic planes in single crystals

The interaction between electrons and atomic planes in a single crystal is discussed via a bound-state model; the transverse-energy spectrum allows one to classify many electron states as bound to individual planes, semibound to a system of planes, or free de Broglie waves. Expressions are derived for the channeling probability and the probability of strong Rutherford scattering. There is a detailed discussion of the states for the (100) and (110) planes of silicon, which play a part in strong electron scattering.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 112–117, January, 1978