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Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films |
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| Authors: | Sergeeva O. N. Solnyshkin A. V. Kiselev D. A. Il’ina T. S. Kukushkin S. A. Sharofidinov Sh. Sh. Kaptelov E. Yu. Pronin I. P. |
| Affiliation: | 1.Tver’ State University, 170026, Tver’, Russia ;2.Herzen State Pedagogical University of Russia, 191186, St. Petersburg, Russia ;3.National University of Science and Technology MISiS, 119049, Moscow, Russia ;4.Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia ;5.Ioffe Institute, 194021, St. Petersburg, Russia ; |
| Abstract: | Physics of the Solid State - Dielectric and polar properties of aluminum nitride (AlN) thin films epitaxially grown on differently oriented silicon substrates with the p-type conduction and a... |
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