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Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma |
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| Authors: | Perevalov T. V. Iskhakzai R. M. Kh. Prosvirin I. P. Aliev V. Sh. Gritsenko V. A. |
| Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ;2.Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ;3.Novosibirsk State Technical University, 630073, Novosibirsk, Russia ; |
| Abstract: | JETP Letters - It is shown that the treatment of stoichiometric HfO2, which is synthesized by atomic layer deposition, in electron cyclotron resonance hydrogen plasma leads to a significant... |
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