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A New Method of Growing AlN,GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates |
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| Authors: | Kukushkin S A Sharofidinov Sh Sh |
| Institution: | 1.Institute of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, Russia ;2.Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia ; |
| Abstract: | Physics of the Solid State - The main principles of a new method of growing bulk single-crystal AlN, AlGaN, and GaN films with thickness from 100 μm and more on silicon substrates with a... |
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