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Model for Thermal Oxidation of Silicon |
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| Authors: | Fadeev A. V. Devyatko Yu. N. |
| Affiliation: | 1.Valiev Institute of Physics and Technology, Russian Academy of Sciences, 117218, Moscow, Russia ;2.National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Moscow, Russia ; |
| Abstract: | Technical Physics - Nanometer-thick silicon oxide films are needed for miniaturization and increase in the working rate of electronic devices. Interpretation of the initial stages of silicon... |
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