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On the Mechanism of the Generation of Runaway Electrons after a Breakdown of a Gap |
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| Authors: | Beloplotov D. V. Tarasenko V. F. Shklyaev V. A. Sorokin D. A. |
| Affiliation: | 1.Institute of High Current Electronics, Siberian Branch, Russian Academy of Sciences, 634055, Tomsk, Russia ;2.National Research Tomsk State University, 634050, Tomsk, Russia ; |
| Abstract: | JETP Letters - Data that explain the generation of runaway electrons after the breakdown of a gap with a sharply inhomogeneous distribution of the electric field strength are presented. Using a... |
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