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Two-Dimensional Excitons in Multiple GaN/AlN Monolayer Quantum Wells
Authors:Evropeitsev  E. A.  Serov  Yu. M.  Nechaev  D. V.  Jmerik  V. N.  Shubina  T. V.  Toropov  A. A.
Affiliation:1.Ioffe Institute, 194021, St. Petersburg, Russia
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Abstract:JETP Letters - The decay kinetics of low-temperature exciton photoluminescence in a heterostructure with multiple GaN/AlN monolayer quantum wells, which is prepared by molecular beam epitaxy, is...
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