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Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates |
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| Authors: | Mizerov A. M. Kukushkin S. A. Sharofidinov Sh. Sh. Osipov A. V. Timoshnev S. N. Shubina K. Yu. Berezovskaya T. N. Mokhov D. V. Buravlev A. D. |
| Affiliation: | 1.St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia ;2.Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia ;3.Ioffe Institute, 194021, St. Petersburg, Russia ;4.St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia ; |
| Abstract: | Physics of the Solid State - The effect of the inversion of polarity in gallium nitride layers from the N-polar GaN layer to the Ga-polar GaN layer was discovered during the sequential growth of... |
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