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Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111)
Authors:Pezoldt  J  Lubov  M N  Kharlamov  V S
Institution:1.Technische Universität Ilmenau, Ilmenau, Germany
;2.St. Petersburg Academic University, St. Petersburg, Russia
;3.Ioffe Institute, St. Petersburg, Russia
;
Abstract:Physics of the Solid State - A kinetic Monte Carlo model of silicon carbide growth on silicon surface is proposed. Based on this model, the growth of silicon carbide clusters on silicon in the...
Keywords:
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