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Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface |
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| Authors: | Milakhin D. S. Malin T. V. Mansurov V. G. Galitsyn Yu. G. Kozhukhov A. S. Aleksandrov I. A. Rzheutski N. V. Lebiadok E. V. Razumets E. A. Zhuravlev K. S. |
| Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ;2.State Scientific and Production Association “Optics, Optoelectronics, and Laser Technology”, 220072, Minsk, Belarus ;3.Novosibirsk State University, 630090, Novosibirsk, Russia ; |
| Abstract: | Physics of the Solid State - The formation of GaN nanocrystals on the graphene-like AlN (g-AlN) modification and graphene-like (g-Si3N3) silicon nitride by ammonia molecular beam epitaxy has been... |
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