Laser photochemical etching of silicon |
| |
| Authors: | S. Affrossman R. T. Bailey C. H. Cramer F. R. Cruickshank J. M. R. MacAllister J. Alderman |
| |
| Affiliation: | (1) Department of Pure and Applied Chemistry, University of Strathclyde, Thomas Graham Building, Cathedral Street, G1 1XL Glasgow, UK;(2) Plessey Research Caswell Limited, Caswell, NN128EQ Towcester, Northampton, UK |
| |
| Abstract: | Argon laser induced chemical etching of single crystal silicon with chlorine is studied. Etch rates are determined as a function of gas pressure, crystal orientation, laser power and wavelength. Analysis of gas phase and surface products by Fourier transform IR and X-ray photoelectron spectroscopy are used to probe the reaction mechanism. Contrary to previous reports, no thermally enhanced etch rate is observed for Si (111) and the presence of oxide on the surface is found to inhibit etching even at high laser power. |
| |
| Keywords: | 79.20 81.60 82.65 |
| 本文献已被 SpringerLink 等数据库收录！ |
|
