Spectroscopic in situ diagnostics of boron nitride film growth in plasma-enhanced deposition |
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Authors: | A Lunk P Bachem P Scheible L Ulrich |
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Institution: | (1) University of Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart, Germany, DE |
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Abstract: | The development of in situ diagnostics of the most important species and reactions in the plasma and/or on the surface during
thin-film growth is one of the current topics in plasma-enhanced vapor deposition. In situ thin film diagnostic methods which
could be used in plasma processing are restricted due to the presence of electrons and ions. The advantages and disadvantages
of different applicable methods will be discussed. The spectroscopic in situ control of boron nitride film growth is presented
as an example of surface modification in low-temperature, low-pressure plasma processing. The growth of cubic and hexagonal
boron nitride is observed by polarized infrared reflection spectroscopy in absorption and ellipsometric configurations as
well as by single-wavelength ellipsometry in the visible spectral range. Modeling of the experimental results gives detailed
information on growth conditions and internal stress of the films.
Received: 8 August 2000 / Accepted: 12 December 2000 / Published online: 3 April 2001 |
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Keywords: | PACS: 78 40 Fy 81 10 Bk 81 70 Fy |
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