| pH值对铌酸锂晶片抛光速率及抛光表面的影响 |
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| 引用本文： | 武晓玲,刘玉岭,王胜利,刘长宇,刘承霖.pH值对铌酸锂晶片抛光速率及抛光表面的影响[J].半导体技术,2007,32(1):37-39. |
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| 作者姓名： | 武晓玲 刘玉岭 王胜利 刘长宇 刘承霖 |
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| 作者单位： | 河北工业大学,微电子研究所,天津,300130;河北工业大学,微电子研究所,天津,300130;河北工业大学,微电子研究所,天津,300130;河北工业大学,微电子研究所,天津,300130;河北工业大学,微电子研究所,天津,300130 |
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| 摘 要： | 采用化学机械抛光方法,自制碱性抛光液对铌酸锂晶片进行抛光,通过试验得出适宜铌酸锂晶片抛光的pH值,配合压力、流量等外界参数可以得到较高的表面质量和较快抛光速率.分析了铌酸锂晶片在碱性条件下的去除机理和抛光液的pH值及抛光液中各个组分对抛光速率和表面质量的影响.
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| 关 键 词： | 铌酸锂 化学机械抛光 pH值 |
| 文章编号： | 1003-353X(2007)01-0037-03 |
| 修稿时间： | 2006-06-30 |
Effect of pH on the Polishing Velocity and Glazed Surface of LN Wafer |
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| WU Xiao-ling,LIU Yu-ling,WANG Sheng-li,LIU Chang-yu,LIU Cheng-lin.Effect of pH on the Polishing Velocity and Glazed Surface of LN Wafer[J].Semiconductor Technology,2007,32(1):37-39. |
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| Authors: | WU Xiao-ling LIU Yu-ling WANG Sheng-li LIU Chang-yu LIU Cheng-lin |
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| Institution: | Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China |
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| Abstract: | The CMP(chemical mechanical polishing) method was used for polishing the LN wafer with the alkaline CMP slurry made by us,the preferably pH value was found,better surface and faster polishing velocity were gained by choosing appropriate press,flux and other parameter.With the alkaline slurry,the effects of removal mechanism of the LN wafer,the pH and slurry component on the polishing velocity and surface quality were analyzed. |
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| Keywords: | LN(LiNbO_3) CMP pH |
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