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The etching of a-plane GaN epilayers grown by metal--organic chemical vapour deposition
Authors:Xu Sheng-Rui  Hao Yue  Zhang Jin-Cheng  Zhou Xiao-Wei  Cao Yan-Rong  Ou Xin-Xiu  Mao Wei  Du Da-Chao  Wang Hao
Affiliation:School of Microelectronics, Xidian University, Xi'an 710071, China and National Key Laboratory of Fundamental Science on Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China and National Key Laboratory of Fundamental Science on Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China and National Key Laboratory of Fundamental Science on Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China and National Key Laboratory of Fundamental Science on Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071, China;School of Electronical & Mechanical Engineering, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China and National Key Laboratory of Fundamental Science on Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China and National Key Laboratory of Fundamental Science on Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China and National Key Laboratory of Fundamental Science on Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China and National Key Laboratory of Fundamental Science on Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071, China
Abstract:Morphology of nonpolar (112-0) a-plane GaN epilayers on r-plane (11-02) sapphire substrate grown by low-pressure metal--organic vapour deposition was investigated after KOH solution etching. Many micron- and nano-meter columns on the a-plane GaN surface were observed by scanning electron microscopy. An etching mechanism model is proposed to interpret the origin of the peculiar etching morphology. The basal stacking fault in the a-plane GaN plays a very important role in the etching process.
Keywords:crystal morphology  stacking fault  nonpolar GaN  chemical etching
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