Nanoscale domain switching mechanism in Pb(Zr,Ti)O3 thin film |
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| Authors: | H.R. Zeng G.R. Li Q.R. Yin Z.K. Xu |
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| Affiliation: | (1) State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P.R. China, CN;(2) Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong, HK |
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| Abstract: | Pb(Zr,Ti)O3 (PZT) ferroelectric thin film was prepared by the sol-gel technique and crystallized with a (111) preferred orientation. The domain structure and polarization reversal behavior were investigated by using scanning force microscopy (SFM) piezoresponse mode at the nanometer scale. A step structure of approximately 30 nm in width was directly observed, which was formed during the polarization reversal process. The presence of the step structure reveals that the forward domain-growth mechanism is the dominant domain-switching process in our PZT thin films. Received: 6 August 2002 / Accepted: 9 August 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +86-21/5241-3122, E-mail: huarongzeng@163.net |
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| Keywords: | PACS: 61.16.Ch 77.84Dy 68.55.Jk 77.80.Dj 77.80.Fm |
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