Electrical characteristics and optoelectronic properties of metal--semiconductor--metal structure with zinc oxide nanowires across Au electrodes |
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Authors: | Wang Ding-Qu Zhou Zhao-Ying Zhu Rong and Ye Xiong-Ying |
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Institution: | State Key Laboratory of Precision Measurement Technology
and Instruments, Department of Precision Instruments and
Mechanology,
Tsinghua University, Beijing 100084, China |
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Abstract: | This paper reports on a method of assembling semiconducting ZnO
nanowires onto a pair of Au electrodes to construct a
metal--semiconductor--metal (MSM) structure by dielectrophoresis and
studying on its electrical characteristics by using current-voltage
($I-V$) measurements. An electronic model with two back to back
Schottky diodes in series with a semiconductor of nanowires was
established to study the electrical transport of the MSM structures.
By fitting the measured $I-V$ characteristics using the proposed
model, the parameters of the Schottky contacts and the resistance of
nanowires could be acquired. The photoelectric properties of the MSM
structures were also investigated by analysing the measurements of
the electrical transports under various light intensities. The
deduced results demonstrate that ZnO nanowires and their Schottky
contacts with Au electrodes both contribute to photosensitivity and
the MSM structures with ZnO nanowires are potentially applicable for
photonic devices. |
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Keywords: | ZnO nanowire MSM structure Schottky barrier optoelectronic
property |
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