Full counting statistics for a single-electron transistor: nonequilibrium effects at intermediate conductance |
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| Authors: | Utsumi Yasuhiro Golubev Dmitri S Schön Gerd |
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| Affiliation: | Institut für Theoretische Festk?perphysik, Universit?t Karlsruhe, 76128 Karlsruhe, Germany. |
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| Abstract: | We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation, we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations. |
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