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Exchange interaction in InAs nanocrystal quantum dots
Authors:U. Banin  J.C. Lee  A.A. Guzelian  A.V. Kadavanich  A.P. Alivisatos
Affiliation:Department of Chemistry and Materials Science Division, University of California at Berkeley and Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, U.S.A.
Abstract:The near band-gap level structure in high-quality colloidal InAs nanocrystal quantum dots within the very strong confinement regime is investigated. Size-selective photoluminescence excitation and fluorescence line narrowing measurements reveal a size-dependent splitting between the absorbing and the emitting states. The splitting is assigned to the confinement-enhanced electron–hole exchange interaction. The size dependence of the splitting significantly deviates from the idealized 1/r3scaling law for the exchange splitting. A model incorporating a finite barrier which allows for wavefunction leakage is introduced. The model reproduces the observed 1/r2dependence of the splitting and good agreement with the experimental data is obtained. The smaller barriers for embedded InAs dots grown by molecular-beam epitaxy, are predicted to result in smaller exchange splitting as compared with colloidal dots with a similar number of atoms.
Keywords:semiconductor nanocrystal   quantum dots   exchange splitting   InAs
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