Selective photoconductivity induced in PbTe(Ga) by a local phonon mode |
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Authors: | A. I. Belogorokhov I. I. Ivanchik S. V. Ponomarev D. R. Khokhlov E. I. Slyn’ko |
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Affiliation: | (1) State Institute of Precious Metals, 109017 Moscow, Russia;(2) Department of Physics, Moscow State University, 119899 Moscow, Russia;(3) Chernovtsy Branch of the Ukrainian Institute of Materials Science, Chernovtsy, Ukraine |
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Abstract: | Selective photoconductivity at frequency ω=155 cm− was discovered in PbTe(Ga) narrow-gap semiconductors at liquid-nitrogen temperatures. The corresponding energy is much lower than all characteristic energies of the electronic spectrum of the semiconductor. The effect is attributed to optical excitation of a local vibrational mode of an impurity center leading to delocalization of the electrons. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 5, 342–346 (10 March 1996) |
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