Biexcitons in Si |
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| Authors: | M.L.W. Thewalt J.A. Rostworowski |
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| Affiliation: | Department of Physics, The University of British Columbia Vancouver, B.C., Canada V6T 1W5 |
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| Abstract: | We observe a new peak in the photoluminescence spectrum of intrinsic Si which we attribute to the recombination of an electron-hole pair in a biexciton leaving behind a free exciton. A calculation of the emission line shape based on a simple model is found to be in good agreement with experiment. From this theoretical fit we deduce a binding energy of 1.2 meV and a ‘radius’ of 100 Å for the biexciton. |
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