Photocapacitance quenching effect for “oxygen” in GaAs |
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| Authors: | G Vincent D Bois |
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| Institution: | Laboratoire de Physique de la Matière, Institut National des Sciences Appliquées de Lyon, 20, Avenue Albert Einstein, 69621 Villeurbanne Cedex, France |
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| Abstract: | New experimental data about the persistent photocapacitance quenching observed at 77 K in GaAs are reported. The effect is demonstrated to arise on the so-called oxygen centre in this material. Thermal annealing is described. The results are interpreted assuming that the O centre when filled with an electron has two possible states: the stable one and a metastable state with a large lattice relaxation. |
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