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Transport properties of photo-excited carriers in slightly compensated Hg0.785Cd0.215Te
Authors:F.J. Bartoli  R.E. Allen  L. Esterowitz  M.R. Kruer
Affiliation:Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
Abstract:Photo-Hall measurements are presented for slightly compensated n-type Hg0.785Cd0.215Te at 4 K where the electron mobility is limited by charged scattering centers. Using a 10.6 μm laser as the optical source, we observe that the electron mobility passes through a maximum as a function of photo-excited carrier density. Mobility expressions based on the Kane-band model are modified to incorporate neutralization of charged scattering centers by photo-excited carriers. Calculated mobility values are found to be in satisfactory agreement with the data. The observed decrease in mobility for high carrier densities is attributed to electron-hole scattering. The mobility enhancement at lower carrier densities is explained in terms of neutralization of charged acceptors.
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