A trend in the energy distributions of Ga dangling-orbital surface states on GaP,GaAs and GaSb (110) |
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| Authors: | M Nishida |
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| Institution: | Department of Electrical Engineering, Kanazawa Institute of Technology, Nonoichi-machi, Kanazawa 921, Japan |
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| Abstract: | Relaxed (110) surfaces of GaP, GaAs, and GaSb are studied by cluster calculations. Strongly localized surface states near the band gap are presented. It is shown that Ga dangling-orbital surface states can occur within the band gap as a result of a strong decrease in the anti-bonding character of surface Ga orbitals. A trend in the bond length on going from GaSb to GaP explains experimental data. Surface states associated with the group-V atoms are also described. |
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