New interpretation of the electronic structure of SiO2 |
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Authors: | Félix Ynduráin |
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Institution: | Departamento de Física Fundamental & Instituto de Física del Estado Sólido (C.S.I.C.), Universidad Autónoma de Madrid, Canto Blanco (Madrid), Spain |
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Abstract: | The SiO2 electronic density of states has been calculated within the Bethe lattice approximation using a simplified tight-binding hamiltonian. All of the experimentally found features, except a peak in the Si L2, 3 spectrum, are reproduced in our calculation when only unlike-atom bonds are present in the structure of the oxide. We have found that a possible origin of the peak in the Si L2, 3 spectrum is the presence of clusters of elemental Si in the oxide. |
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