A case for large Auger recombination cross sections associated with deep centers in semiconductors |
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| Authors: | M. Jaros |
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| Affiliation: | Department of Physics and Astronomy, University of Massachusetts, Amherst, MA 01003, U.S.A. |
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| Abstract: | It is argued that the recent quantitative results concerning localized defects in semiconductors (e.g. GaAs) are consistent with the possibility of large Auger-type cross sections associated with recombination at these centers.It is proposed that many of the capture cross sections reported to be in the range 10?13–10?16cm2, which exhibit only weak temperature dependence, and which do not depend on carrier concentration, might be explained by this mechanism. |
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| Keywords: | Present address: Department of Theoretical Physics The University Newcastle upon Tyne U.K. |
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