Temperature dependence of the fundamental absorption edge in CuGaSe2 |
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Authors: | H. Neumann W. Hörig E. Reccius W. Möller G. Kühn |
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Affiliation: | Sektion Physik, Karl-Marx-Universität, 701 Leipzig, DDR;Sektion Chemie (Fachbereich Kristallographie), Karl-Marx-Universität, 703 Leipzig, DDR |
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Abstract: | The temperature dependence of the fundamental absorption edge in CuGaSe2 single crystals was determined in the temperature range from 15 to 300 K. Above about 120 K the gap energy changes linearly with temperature with dEg/dT = ? (2.1 ± 0.1) eV K?1. The downshift in dEg/dT of the I–III–VI2 compounds compared to their II–VI analogs is discussed accounting for the p-d hybridization of the uppermost valence band. |
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