Surface-induced valley-splitting in n-channel (001) silicon-MOS charge layer |
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| Authors: | M. Nakayama L.J. Sham |
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| Affiliation: | Department of Physics, Brown University, Providence, RI 02912, U.S.A.;Max-Planck Institute für Festkörperforschung, Stuttgart, West Germany |
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| Abstract: | The surface-induced valley-splitting theory by Sham and Nakayama is shown in the special case of a two-band model for the silicon band structure to be closely related to the electric break-through effect of Ohkawa and Uemura. Recent criticisms of our theory by Ohkawa are shown to be erroneous. |
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