Reevaluation of bandgap and free exciton binding energy of GaP

Very sensitive measurements on the spectral behaviour of the free-to-bound excitation σ_pl^°(hν) from the valence band to the deep 0 donor in GaP at low temperatures are presented. Evaluation of the threshold energy for the electronic transition, together with the known value of the 0 binding energy, provides a simple and accurate way to determine the indirect bandgap E_g of GaP. Our new value is E_g = 2.3525 ± 0.003 eV at 1.5 K, which gives an exciton binding energy E_x = 24 ± 3 meV, considerably larger than previously used values. These data also imply an upward revision of acceptor binding energies in GaP with 10 ± 2 meV.