Carrier collection in a semiconductor quantum well |
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| Authors: | H Shichijo RM Kolbas N Holonyak RD Dupuis PD Dapkus |
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| Institution: | Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, U.S.A.;Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim, CA 92803, U.S.A. |
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| Abstract: | Data are presented showing that a GaAs quantum well, sandwiched between two epitaxial AlxGa1-xAs(x ～ 0.4) confining layers, loses its effectiveness as a collector of excess carriers and as a source of recombination radiation for well dimensions Lz < 100 Å. It is shown that this behavior is expected because of the difficulty in scattering carriers to the bottom of the quantum well as Lz → lp, the path length for scattering (LO phonon). |
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