Oxidation and nitridation of niobium films by rapid thermal processing |
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Authors: | Volha A Matylitskaya Wolfgang Bock Klaus Thoma Bernd O Kolbesen |
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Institution: | Institut für Anorganische und Analytische Chemie, Johann Wolfgang Goethe-Universit?t Frankfurt/M., Marie-Curie-Str. 11, D-60439, Frankfurt/M, Germany Institut für Oberfl?chen- und Schichtenanalytik (IFOS), Universit?t Kaiserslautern, Kaiserslautern, Germany Experimentalphysik, Universit?t Kassel, Kassel, Germany
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Abstract: | The oxidation and nitridation processes of niobium films in a rapid thermal processing (RTP) – system were investigated. 200
and 500 nm niobium films were deposited via sputtering on sapphire-(1-102)-substrate. At first niobium films were oxidized
in molecular oxygen at temperatures ranging from 350 to 500 °C and for times of 1, 2 and 5 min and then nitridated in ammonia
at 1000 °C for 1 min using an RTP system. For characterisation of the niobium films complementary analytical methods were
used: X-ray diffraction (XRD) for phase analysis, secondary ion mass spectrometry (SIMS) for determining the elemental depth
profiles of the films, scanning electron microscopy (SEM) and atomic force microscopy (AFM) for characterisation of the surface
morphology of the films. The influence of the substrate, single crystalline sapphire, on the reactivity of the niobium films
was studied in dependence of temperature, time of reaction and film thickness. The possibility of existence of niobium oxynitride
phase was investigated. According to XRD and SIMS data, there is evidence that an oxynitride phase is formed after oxidation
and subsequent nitridation in the bulk of some Nb films. In some of the experiments crack formation in the films or even delamination
of the Nb films from the substrates was observed. |
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Keywords: | : Niobium rapid thermal processing (RTP) nitrides oxynitrides thin films X-ray diffraction (XRD) SIMS depth profile |
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