Tunable electroluminescence from n-ZnCdO/p-GaN heterojunction |
| |
| Authors: | Fang Fang Dongxu Zhao Xuan Fang Jinhua Li Zhipeng Wei Shaozhuan Wang Jilong Wu Dezhen Shen Xiaohua Wang |
| |
| Institution: | 1. Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People''s Republic of China;2. International Joint Research Center for Nanophotonics and Biophotonics, 7089 Wei-Xing Road, Changchun 130022, People''s Republic of China;3. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People''s Republic of China |
| |
| Abstract: | By cadmium allowing of zinc oxide, a phosphor-free single-chip white light emission diode based on n-ZnCdO/p-GaN heterostructure has been realized. The white light electroluminescence was produced by the superposition of two intense emission bands, a blue band and a yellow band. The origins of the blue band was contributed by both GaN and ZnCdO, while the yellow band was from the recombination of the holes and the electrons in the interface of GaN and ZnCdO. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
