Optical bandgap and electrical conductivity studies on near stoichiometric LiNbO3 crystals prepared by VTE process |
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Authors: | Rajeev Bhatt S. Ganesamoorthy Indranil Bhaumik A.K. Karnal P.K. Gupta |
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Affiliation: | Laser Materials Development and Devices Division, Raja Ramanna Centre for Advanced Technology, Indore, MP 452013, India |
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Abstract: | Vapour transport equilibrium (VTE) technique was used to prepare near stoichiometric LiNbO3 (NSLN) crystals. Simultaneous occurrence of reduction has been observed during the Li-enrichment that results in the weak absorption bands centred at 1.7, 2.6 and 3.7 eV in the absorption spectrum. Annealing in oxygen atmosphere resulted in decrease in the intensity of these bands. The indirect and direct band-gap energies for NSLN crystals evaluated from absorption studies are reported. The energy of the phonon involved in the indirect transition is ~85 meV (685 cm?1). Near room temperature ac-conductivity measurements reveal lower conductivity for oxygen annealed NSLN crystal in comparison to as prepared NSLN and CLN specimens. The activation energies for ac-conductivity along the z-direction for NSLN and CLN crystals in the temperature range 500–1100 K are 1.03 eV and 0.96 eV, respectively. |
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