| GaAs-Ga1-xAlxAs量子阱中极化子的结合能 |
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| 引用本文： | 阮航宇,田明真,潘金声.GaAs-Ga1-xAlxAs量子阱中极化子的结合能[J].发光学报,1987,8(4):291-296. |
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| 作者姓名： | 阮航宇 田明真 潘金声 |
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| 作者单位： | 中国科学院长春物理研究所 |
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| 摘 要： | 本文应用微扰法,计算了GaAs-Ga1-xAlxAs量子阱内电子极化子,轻、重空穴极化子的基态束缚能,得到极化子束缚能随阱宽的变化曲线.
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| 收稿时间： | 1987-06-26 |
BINDING ENERGY OF DRESSED CHARGED PARTICLES IN GaAs-Ga1-xAlxAs QUANTUM WELL |
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| Ruan Hangyu,Tian Mingzhen,Pan Jinsheng.BINDING ENERGY OF DRESSED CHARGED PARTICLES IN GaAs-Ga1-xAlxAs QUANTUM WELL[J].Chinese Journal of Luminescence,1987,8(4):291-296. |
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| Authors: | Ruan Hangyu Tian Mingzhen Pan Jinsheng |
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| Institution: | Changchun Institute of Physics, Academia Sinica |
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| Abstract: | A theory of charged particle-phonon interaction in dielectric bilayer systems has been developed by Wendler and Pan Jinsheng.In these papers the interaction between charged particles and phonons in a quantum well is taken into consideration.A calculation is given for the binding energy of the ground state of the charged particles in GaAs-Ga1-xAlxAs quantum well by use of perturbation method.The variation of the binding energy of the charged particle with the well width are discussed.It is shown that the interaction between the charged particles and phonons must be taken into account in quantum well. |
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