| 应变Si1-xGex能带结构研究 |
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| 引用本文： | 宋建军,张鹤鸣,胡辉勇,宣荣喜,戴显英. 应变Si1-xGex能带结构研究[J]. 物理学报, 2009, 58(11): 7947-7951 |
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| 作者姓名： | 宋建军 张鹤鸣 胡辉勇 宣荣喜 戴显英 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071 |
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| 基金项目： | 国家部委项目(批准号：51308040203,9140A08060407DZ0103,6139801)资助的课题. |
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| 摘 要： | 采用结合形变势理论的K.P微扰法建立了（001），（101）和（111）面弛豫Si衬底上生长的应变Si1-xGex（x≤0.5）的能带结构模型，获得了其导带带边能级、价带带边能级、导带劈裂能、价带劈裂能及禁带宽度随Ge组分（x）的函数变化关系，该量化数据对器件研究设计可提供有价值的参考．关键词：1-xGex')" href="#">应变Si1-xGexK.P 法能带结构
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| 关 键 词： | 应变Si1-xGex K.P 法 能带结构 |
| 收稿时间： | 2009-03-13 |
| 修稿时间： | 2009-04-03 |
Band structure of strained Si_(1-x) Ge_x |
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| Song Jian-Jun,Zhang He-Ming,Hu Hui-Yong,Xuan Rong-Xi and Dai Xian-Ying. Band structure of strained Si_(1-x) Ge_x[J]. Acta Physica Sinica, 2009, 58(11): 7947-7951 |
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| Authors: | Song Jian-Jun Zhang He-Ming Hu Hui-Yong Xuan Rong-Xi Dai Xian-Ying |
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| Abstract: | There has been a lot of interest in the Si based strained technology lately, especially the modification of band structures which provides a theoretical basis for the design of the high-speed and high-performance devices and circuits. The band structure models of strained Si_(1-x) Ge_x on (001), (101), (111) relaxed Si are set up using K. P perturbation method coupled with deformation potential theory. Ge fraction (x) dependence of the conduction band (CB) and the valence band (VB) edge levels, CB and VB splitting energy and the indirect bandgap were obtained. The quantitative data from the models can supply valuable references to the design of devices. |
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| Keywords: | strained Si1-xGex K.P method band structure |
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