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In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(1 1 1):H and GaAs(0 0 1) and corrosion of Cu3Au(1 1 1)
Authors:J. Zegenhagen  F.U. Renner  T.L. Lee  A. Stierle  G. Scherb  D.M. Kolb
Affiliation:a European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France
b Abteilung Elektrochemie, Universität Ulm, D-89069 Ulm, Germany
c Max-Planck-Institut für Metallforschung, D-70569 Stuttgart, Germany
d Max-Planck-Institut für Festkörperforschung, D-70569 Stuttgart, Germany
e Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
Abstract:Electrochemical deposition of Cu and Co in monolayer amounts on hydrogen terminated Si(1 1 1) was studied ex situ and in situ by X-ray techniques. The X-ray beam was found to have a strong effect on the deposit causing desorption under the beam. Cu deposition on GaAs(0 0 1) from UHV is compared with electrodeposited Cu on the same surface, elucidating similarities and differences of electrochemical and UHV deposition. Roughening due to corrosion of Cu3Au(1 1 1) is observed by crystal truncation scattering. The observed behaviour of passivation of this surface is explained by the formation of Au clusters, increasingly covering the surface at higher oxidation potential.
Keywords:Electrochemical methods   X-ray standing waves   X-ray scattering, diffraction, and reflection   Epitaxy   Copper   Gold   Cobalt   Silicon   Single crystal surfaces   Solid-liquid interfaces   Clusters
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