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Finding the reconstructions of semiconductor surfaces via a genetic algorithm
Authors:FC Chuang  VB Shenoy  KM Ho
Institution:a Ames Laboratory—US Department of Energy and Department of Physics, Iowa State University, Ames, IA 50011, USA
b Division of Engineering, Brown University, Providence, RI 02912, USA
c Division of Engineering, Colorado School of Mines, Golden, CO 80401, USA
Abstract:In this article we show that the reconstructions of semiconductor surfaces can be determined using a genetic procedure. Coupled with highly optimized interatomic potentials, the present approach represents an efficient tool for finding and sorting good structural candidates for further electronic structure calculations and comparison with scanning tunneling microscope (STM) images. We illustrate the method for the case of Si(1 0 5), and build a database of structures that includes the previously found low-energy models, as well as a number of novel configurations.
Keywords:Surface relaxation and reconstruction  Surface energy  Genetic algorithm  Semi-empirical models and model calculations  Silicon
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