Oxidation, Diffusion and Segregation in CuNi(Mn) Films Studied by AES |
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Authors: | Stefan Baunack Winfried Brückner |
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Affiliation: | Institut für Festk?rper- und Werkstofforschung Dresden, Postfach 270016, D-01171 Dresden, Germany, DE
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Abstract: | The surface and in-depth compositions of sputter-deposited Cu0.57Ni0.42Mn0.01 thin films were studied by Auger electron depth profiling after thermal treatment. The samples were thermally cycled to maximum temperatures of 300 °C to 550 °C in air, argon and forming gas (N2, 5 vol. % H2). Linear least-squares fit to standard spectra and factor analysis were applied to separate the overlapping Auger transitions of Cu and Ni. Under bombardment by 4 keV argon ions, CuNi(Mn) layers display bombardment-induced surface enrichment of Ni in the same extent as binary CuNi alloys. At sufficiently high oxygen partial pressures, a duplex oxide layer is formed and a thick surface copper oxide overgrows the initial nickel oxide. In reducing atmosphere selective oxidation of manganese takes place. A capping NiCr layer prevents CuNi(Mn) from being oxidized, but the film configuration is degraded with increasing annealing temperature due to formation of a surface chromium oxide and diffusion of Ni from the CuNi(Mn) layer into the NiCr/CuNi(Mn) interface. |
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Keywords: | : Cu-Ni thin film AES interdiffusion segregation oxidation factor analysis. |
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