| Si~+注入SOS中退火固相外延再生长改善结晶质量 |
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| 引用本文： | 罗朝渭,乔墉,陈庆贵,蔡希介,史日华.Si~+注入SOS中退火固相外延再生长改善结晶质量[J].固体电子学研究与进展,1986(1). |
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| 作者姓名： | 罗朝渭 乔墉 陈庆贵 蔡希介 史日华 |
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| 作者单位： | 中国科学院上海冶金研究所
(罗朝渭，乔墉，陈庆贵，蔡希介)，中国科学院上海冶金研究所(史日华) |
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| 摘 要： | 本文研究Si~+室温深注入(150～160keV,1～3×10~15/cm~2)SOS中600+1050℃两步退火固相外延再生长改善SOS膜界面附近结晶质量和Si~+室温浅注入(85keV,3×10~(15)/cm~2)SOS中600+1050℃两步退火固相外延再生长改善SOS膜表面结晶质量的工艺.180keVH~+沟道效应—背散射测量表明,两步Si~+注入和两步退火团相外延再生长工艺能够有效地改善SOS膜结晶质量°表面归一化最小产额x_o、界面最小产额x_i 和退道率dx/dz分别减小到0.06、0.12和0.19/μm.
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Improvements of Crystalline Quality of SOS Film by Si~+ Implantation and Solid-Phase Epitaxial Regrowth |
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| Abstract: | Improvements of SOS crystalline quality in the vicinity of the interface and on the surface have been studied by means of deep (150-160keV, 1 -1.4 × 1015/cm2) and shallow (85keV, 3×1015/cm2) Si+ implantation into SOS at room temperature and solid-phase epitaxial regrowth during two-step thermal annealing at 600℃ and 1050℃, respectively. It is clearly shown that this method has significantly improved the crystalline quality of SOS film through the measurement of 180keV H+ channeling effect back-scattering. Normalized minimum yields χ0 on the surface and χi in the interface and
the average dechanneling rate dx/dz are reduced to 0.06, 0.12 and 0.19/μm, respectively. |
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