Dielectrophoretically aligned GaN nanowire rectifiers |
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| Authors: | S-Y Lee T-H Kim D-I Suh E-K Suh N-K Cho W-K Seong S-K Lee |
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| Institution: | (1) Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, Jeonju, 561-756, South Korea;(2) Nano Mechatronics Research Center, Korea Electronics Technology Institute (KETI), Seongnam, 463-816, South Korea |
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| Abstract: | We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate
by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with
three different ac bias voltages (5, 10, and 15 Vp–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes
showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm2. We observed that the GaN NW diode functioned well as a half-wave rectifier.
PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp |
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