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High-field interlayer tunnelling transport in layered cuprates: Uncovering the pseudogap state
Authors:L.?Krusin-Elbaum  author-information"  >  author-information__contact u-icon-before"  >  mailto:krusin@us.ibm.com"   title="  krusin@us.ibm.com"   itemprop="  email"   data-track="  click"   data-track-action="  Email author"   data-track-label="  "  >Email author,T.?Shibauchi
Affiliation:(1) IBM T.J. Watson Research Center, Yorktown Heights, 10598 New York, USA;(2) Department of Electronic Science and Engineering, Kyoto University, 615-8510 Kyoto, Japan
Abstract:In high temperature (high T c ) cuprate superconductors the gap in the electronic density of states is not fully filled at T c ; it evolves into a partial (pseudo)gap that survives way beyond T c , challenging the conventional views. We have investigated the pseudogap phenomenon in the field-temperature (H-T) diagram of Bi2Sr2CaCu2O8 + y over a wide range of hole doping ($0.10 leq p leq 0.225$). Using interlayer tunneling transport in magnetic fields up to 60 T to probe the density-of states (DOS) depletion at low excitation energies we mapped the pseudogap closing field H pg . We found that H pg and the pseudogap onset temperature T * are related via a Zeeman relation $gmu_BH_{pg} approx k_BT^*$, irrespective of whether the magnetic field is applied along the c-axis or parallel to CuO2 planes. In contrast to large anisotropy of the superconducting state, the field anisotropy of H pg is due solely to the g-factor. Our findings indicate that the pseudogap is of singlet-spin origin, consistent with models based on doped Mott insulator.Received: 2 February 2004, Published online: 10 August 2004PACS: 74.25.Dw Superconductivity phase diagrams - 74.25.Fy Transport properties (electric and thermal conductivity, thermoelectric effects, etc.) - 74.72.Hs Bi-based cuprates
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