Structure and thermal stability of (Zr0.6Al0.4)O1.8 thin film on strained SiGe layer |
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| Authors: | Zengfeng Di Miao Zhang Weili Liu Suhua Luo Zhenghua An Zhengxuan Zhang Chenglu Lin |
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| Institution: | The Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional, Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People’s Republic of China |
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| Abstract: | Zr0.6Al0.4O1.8 dielectric films were deposited directly on strained SiGe substrates at room temperature by ultra-high vacuum electron-beam evaporation (UHV-EBE) and then annealed in N2 under various temperatures. X-ray diffraction (XRD) reveals that the onset crystallization temperature of the Zr0.6Al0.4O1.8 film is about 900 °C, 400 °C higher than that of pure ZrO2. The amorphous Zr0.6Al0.4O1.8 film with a physical thickness of ∼12 nm and an amorphous interfacial layer (IL) with a physical thickness of ∼3 nm have been observed by high-resolution transmission electron microscopy (HRTEM). In addition, it is demonstrated there is no undesirable amorphous phase separation during annealing at temperatures below and equal to 800 °C in the Zr0.6Al0.4O1.8 film. The chemical composition of the Zr0.6Al0.4O1.8 film has been studied using secondary ion mass spectroscopy (SIMS). |
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| Keywords: | T200 |
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