a Department of Physics, Nagoya University, Nagoya 464-01, Japan
b Department of Mechanical System Engineering, Kyushu Institute of Technology, Fukuoka 820, Japan
Abstract:
The properties of the charge fluctuation are investigated in the d---p model with the repulsion Upd between holes on the nearest-neighbor Cu and O sites and the infinite on-site repulsion Ud at the Cu site. We calculate the charge susceptibility χc(q, iωn) and the charge correlation function Sc(q) = TΣωn χc(q, iωn). It is found that Sc(q) has a peak at the Γ point and a maximum in a ring around the Γ point. The former is due to Tχc(q, 0). Its intensity is proportional to temperature T and strongly enhanced by Upd. The latter is due to TΣωn ≠ 0 χc(q, iωn) and shows a weak T and Upd dependence. The intensity of the diffuse X-ray scattering on taking the charge fluctuation into account is also calculated. The result is consistent with the experiments in La2?δSrδCuO4.